PART |
Description |
Maker |
MT48LC16M16A2P-75DTR |
SDR SDRAM MT48LC64M4A2 ?16 Meg x 4 x 4 banks MT48LC32M8A2 ?8 Meg x 8 x 4 banks MT48LC16M16A2 ?4 Meg x 16 x 4 banks
|
Micron Technology
|
M463S1724DN1 |
16Mx64 SDRAM mSODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synch. DRAMs with SPD Data Sheet
|
Samsung Electronic
|
48SD3208 48SD3208RPFH 48SD3208RPFK 48SD3208RPFE 48 |
256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks
|
MAXWELL[Maxwell Technologies]
|
97SD3240 97SD324006 |
1.25Gb SDRAM 8-Meg X 40-Bit X 4-Banks
|
Maxwell Technologies
|
97SD3248 97SD324806 |
1.5Gb SDRAM 8-Meg X 48-Bit X 4-Banks
|
Maxwell Technologies
|
AS4SD4M16DG-8_XT AS4SD4M16 AS4SD4M16DG-10_IT AS4SD |
4 Meg x 16 SDRAM Synchronous DRAM Memory
|
AUSTIN[Austin Semiconductor]
|
48SD6404RPFK 48SD6404RPFI |
256 Mb SDRAM 16-Meg X 4-Bit X 4-Banks
|
Maxwell Technologies, Inc
|
KM48L16031BT-GF0 KM48L16031BT-GFY KM48L16031BT-GFZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns. DDR SDRAM Specification Version 0.61 128Mb DDR SDRAM 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns.
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
AS4SD16M16DG-75/IT AS4SD16M16DG-75/XT |
256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory
|
Austin Semiconductor
|
CHR CHR2520FC-10MEG-1 |
10 Meg to 100 Meg, 1 Tolerance, Temperature Coefficient to as low as 25 ppm/C
|
Rhopoint Components Ltd.
|
IDT72V8981 IDT72V8981DB IDT72V8981J IDT72V8981J8 7 |
From old datasheet system 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128 128 x 128 TSI, 4 I/O at 2Mbps, Variable Delay, 3.3V
|
Integrated Device Technology IDT
|
HYB25D128160CE-6 HYB25D128400CE-6 HYB25D128800CE-6 |
DDR SDRAM Components - 128Mb (8Mx16) DDR333 (2.5-3-3); Available 2Q04 DDR SDRAM Components - 128Mb (32Mx4) DDR333 (2.5-3-3); Available 2Q04 DDR SDRAM Components - 128Mb (16Mx8) DDR333 (2.5-3-3); Available 2Q04 128 Mbit Double Data Rate SDRAM
|
Infineon
|